National Science Foundation Awards FinScale Innovation Research Grant

Funding to commercialize breakthrough 3D MOSFET device and process inventions to extend technology roadmaps for semiconductor manufacturers

DUBLIN, Calif., August 21, 2015 – FinScale Incorporated, the semiconductor device and process innovation company, today announced that it has received a Small Business Innovation Research (SBIR) award from the National Science Foundation (NSF). The Phase I grant funds development of in silico proofs-of-concept and performance validations of FinScale’s breakthrough qFinFET™ nanodevice architecture and manufacturing process at the 10nm, 7nm and 5nm semiconductor manufacturing technology nodes. This NSF-funded commercialization project, which began on July 1, directly addresses current obstacles to technology scaling to enable higher performance, denser and more power-efficient chips and systems that will advance future computing, storage, memory, mobile, sensor and Internet-of-Things (IoT) applications.

“The general challenge in developing nanoscale transistors is that device sizes are comparable to critical quantum physics material parameters,” said Dr. Victor Koldyaev, FinScale’s CTO, chief scientist and the principal investigator on this NSF-funded project. “To validate qFinFET’s performance we will expand the capabilities of industry-standard Technology Computer Aided Design (TCAD) modeling and simulation tools to identify and quantify the effects of 2D quantum screening and other quantum phenomena on MOSFET operation in the quasi-ballistic regime.”

FinScale’s goal for the Phase I work is to produce the compelling data set needed by semiconductor manufacturers to confidently move forward with commercialization of qFinFET technology at the 10 nm, 7 nm and 5 nm technology nodes, including optimized three-dimensional transistor specifications, fabrication process sequences, test structure designs and design-of-experiment tables to support accelerated silicon validations and ramps to mass production.

“FinScale appreciates the vision and support of the National Science Foundation for commercialization of breakthrough technologies for the semiconductor industry,” said Jeffrey Wolf, president and CEO of FinScale. “We are also proud of our qFinFET inventors, Dr. Victor Koldyaev and Dr. Rimma Pirogova, for their outstanding contributions to advancements in semiconductor manufacturing technology, science and the continuation of Moore’s Law.”

About the National Science Foundation (NSF)

The NSF Small Business Innovation Research / Small Business Technology Transfer (SBIR/STTR) program seeks to transform scientific discovery into societal and economic benefit by catalyzing private sector commercialization of technological innovations. The program increases the incentive and opportunity for startups and small businesses to undertake cutting-edge, high-quality scientific research and development. NSF makes supplemental funding opportunities available to extend and accelerate Phase I projects to the commercialization stage through matching third party investments in Phase IB awards and through Phase II commercialization awards.

About FinScale Inc.

 FinScale invents, develops and licenses advanced technologies for the semiconductor industry that extend the life of Moore’s Law. Inventors of the patented Quantum FinFET and qFinFET™ technologies, the company provides device and process solutions for high performance (HP) to ultra-low power (ULP) logic, SRAM, DRAM, NAND and NOR flash memory, and system-on-chip (SoC) fabrication that are supported by technology transfer, commercialization and expert consulting services.  FinScale, a San Francisco Bay area startup founded in 2014 by semiconductor scientists and engineers with decades of global experience in advanced technology development and commercialization, is headquartered in Dublin, CA with technology development in Morgan Hill, CA. Find more information or request a briefing at www.finscale.com.